maximum ratings and thermal characteristics (ta = 25℃ unless otherwise noted) parameter symbol limit unit drain-source voltage vds -20 v gate-source voltage vgs ±12 continuous drain current 1) id -2.2 a pulsed drain current 2) idm -8 maximum power dissipation ta=25℃ pd 1.25 w ta=75℃ 0.8 operating junction and storage temperature range tj, tstg -55 to 150 ℃ junction-to-ambient thermal resistance (pcb mounted)3) rθja 140 w/℃ note: 1. fused current that based on wire numbers and diameter 2. repetitive rating: pulse width limited by the maximum junction temperature 3. 1-in2 2oz cu pcb board electrical characteristics parameter symbol test condition min typ max unit static drain-source breakdown voltage bvdss vgs = 0v, id = 250ua 20 -- -- v drain-source on-stage resistance rds(on) vgs = -4.5v, id = -2.8a -- 71.0 100.0 mω drain-source on-stage resistance rds(on) vgs = -2.5v, id = -2.0a -- 83.0 150.0 drain-source on-stage resistance rds(on) vgs = -1.8v, id = -2.0a -- 100.0 170.0 gate threshold voltage vgs(th) vds = vgs, id = 250ua -0.45 -0.61 -0.9 v zero gate voltage drain current idss vds = -9.6v, vgs = 0v -- -- 1 ua gate body leakage igss vgs = ±8v, ids=0ua -- -- ±100 na dynamic3) total gate charge qg vds = -6v, id = -2.8a vgs = -4.5v -- -- -- nc gate-source charge qgs -- -- -- gate-drain charge qgd -- -- -- turn-on delay time td(on) vdd = -6v, rl = 6ω id = -1a, vgen = -4.5v rg = 6ω -- -- -- ns turn-on rise time tr -- -- -- turn-off delay time td(off) -- -- -- turn-off fall time tf -- -- -- input capacitance ciss vds = -6v, vgs = 0v f=1.0mhz -- -- -- pf output capacitance coss -- -- -- reverse transfer capacitance crss -- -- -- source-drain diode max. diode forward current is -- -- -- 1.6 a diode forward voltage vsd is = -1.6a, vgs = 0v -- -0.75 -- v note: pulse test: pulse width <= 300us, duty cycle<= 2% 3. guaranteed by design; not subject to production testing